Characterization of electron irradiated GaN n⁺-p diodeDONG UK LEE; EUN KYU KIM; BYUNG CHEOL LEE et al.Thin solid films. 2008, Vol 516, Num 11, pp 3482-3485, issn 0040-6090, 4 p.Conference Paper

Crystallization of amorphous Ge films induced by semiconductor diode laser annealingSAKAIKE, K; HIGASHI, S; MURAKAMI, H et al.Thin solid films. 2008, Vol 516, Num 11, pp 3595-3600, issn 0040-6090, 6 p.Conference Paper

Plasma ash processing solutions for advanced interconnect technologyFULLER, N. C. M; WORSLEY, M. A; TAI, L et al.Thin solid films. 2008, Vol 516, Num 11, pp 3558-3563, issn 0040-6090, 6 p.Conference Paper

Characteristics of monopole antenna plasmas for TEOS PECVDTAKIZAWA, K; MORI, Y; MIYATAKE, N et al.Thin solid films. 2008, Vol 516, Num 11, pp 3605-3609, issn 0040-6090, 5 p.Conference Paper

Deposition of polycrystalline SiGe by surface wave excited plasmaTAKANISHI, Y; OKAYASU, T; TOYODA, H et al.Thin solid films. 2008, Vol 516, Num 11, pp 3554-3557, issn 0040-6090, 4 p.Conference Paper

Investigation of reduction in etch rate of isolated holes in SiOCHMOMONOI, Yoshinori; YONEKURA, Kazumasa; IZAWA, Masaru et al.Thin solid films. 2008, Vol 516, Num 11, pp 3564-3567, issn 0040-6090, 4 p.Conference Paper

Prediction of etching results and etching stabilization by applying principal component regression to emission spectra during in-situ cleaningIWAKOSHI, Takehisa; HIROTA, Kosa; MORI, Masahito et al.Thin solid films. 2008, Vol 516, Num 11, pp 3464-3468, issn 0040-6090, 5 p.Conference Paper

Single dopant white electrophosphorescent light emitting diodes using heteroleptic tris-cyclometalated Iridium(III) complexesJI HYUN SEA; IN JOON KIM; YOUNG KWAN KIM et al.Thin solid films. 2008, Vol 516, Num 11, pp 3614-3617, issn 0040-6090, 4 p.Conference Paper

Synthesis and photo physical study of iridium complex of new pentafluorophenyl-substituted ligandsGUI YOUN PARK; JI HYUN SEO; YOUNG KWAN KIM et al.Thin solid films. 2008, Vol 516, Num 11, pp 3622-3626, issn 0040-6090, 5 p.Conference Paper

Control of electrical resistivity of TaN thin films by reactive sputtering for embedded passive resistorsKANG, S. M; YOON, S. G; SUH, S. J et al.Thin solid films. 2008, Vol 516, Num 11, pp 3568-3571, issn 0040-6090, 4 p.Conference Paper

Inductively coupled plasma reactive ion etching of ZnO films in HBr/Ar plasmaSU RYUN MIN; HAN NA CHO; YUE LONG LI et al.Thin solid films. 2008, Vol 516, Num 11, pp 3521-3529, issn 0040-6090, 9 p.Conference Paper

Time-resolved optical emission spectroscopy of pulsed RF plasmas with copper magnetron sputteringKANG, Namjun; PARK, Junghoon; OH, Soo-Ghee et al.Thin solid films. 2008, Vol 516, Num 11, pp 3460-3463, issn 0040-6090, 4 p.Conference Paper

Chemical and structural modifications in a 193-nm photoresist after low-k dry etchKESTERS, E; CLAES, M; BIEBUYK, J. J et al.Thin solid films. 2008, Vol 516, Num 11, pp 3454-3459, issn 0040-6090, 6 p.Conference Paper

Electrochemical properties of TiN coatings on 316L stainless steel separator for polymer electrolyte membrane fuel cellJEON, W.-S; KIM, J.-G; KIM, Y.-J et al.Thin solid films. 2008, Vol 516, Num 11, pp 3669-3672, issn 0040-6090, 4 p.Conference Paper

Fabrication and electrochemical characterization of HRP-lipid Langmuir-Blodgett film and its application as an H₂O₂ biosensorKAFI, A. K. M; LEE, Dong-Yun; CHOI, Won-Suk et al.Thin solid films. 2008, Vol 516, Num 11, pp 3641-3645, issn 0040-6090, 5 p.Conference Paper

Increase of hardness and thermal stability of TiAlN coating by nanoscale multi-layered structurization with a BN phasePARK, Jong-Keuk; BAIK, Young-Joon.Thin solid films. 2008, Vol 516, Num 11, pp 3661-3664, issn 0040-6090, 4 p.Conference Paper

Investigation of particle reduction and its transport mechanism in UHF-ECR dielectric etching systemKOBAYASHI, Hiroyuki; YOKOGAWA, Kenetsu; MAEDA, Kenji et al.Thin solid films. 2008, Vol 516, Num 11, pp 3469-3473, issn 0040-6090, 5 p.Conference Paper

Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxySAITO, K; NISHIMURA, K; SUZUKI, H et al.Thin solid films. 2008, Vol 516, Num 11, pp 3517-3520, issn 0040-6090, 4 p.Conference Paper

Low temperature deposition of tin oxide films by inductively coupled plasma assisted chemical vapor depositionLEE, H. Y; KIM, J. N; KIM, Hun et al.Thin solid films. 2008, Vol 516, Num 11, pp 3538-3543, issn 0040-6090, 6 p.Conference Paper

Molecular dynamics simulations for nitridation of organic polymer surfaces due to hydrogen-nitrogen ion beam injectionsYAMASHIRO, Masashi; YAMADA, Hideaki; HAMAGUCHI, Satoshi et al.Thin solid films. 2008, Vol 516, Num 11, pp 3449-3453, issn 0040-6090, 5 p.Conference Paper

Physical properties of carbon nanotubes radiated by proton beams : Gas adsorption and electron microscopy studiesKIM, Byung-Wook; KIM, Euikwoun; LEE, Jungjil et al.Thin solid films. 2008, Vol 516, Num 11, pp 3474-3477, issn 0040-6090, 4 p.Conference Paper

The effect of inductively coupled plasma treatment on the surface activation of polycarbonate substrateKIM, H; JUNG, S. J; HAN, Y. H et al.Thin solid films. 2008, Vol 516, Num 11, pp 3530-3533, issn 0040-6090, 4 p.Conference Paper

Enhancement of the lifetime in organic light-emitting devices fabricated utilizing wide-bandgap-impurity-doped emitting layersCHOO, D. C; BANG, H. S; KWACK, B. C et al.Thin solid films. 2008, Vol 516, Num 11, pp 3610-3613, issn 0040-6090, 4 p.Conference Paper

Infinitely high etch selectivity during CH₄/H₂/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist maskKIM, D. Y; KO, J. H; PARK, M. S et al.Thin solid films. 2008, Vol 516, Num 11, pp 3512-3516, issn 0040-6090, 5 p.Conference Paper

Effect of assist ion beam voltage on intrinsic stress and optical properties of Ta₂O₅ thin films deposited by dual ion beam sputteringYOON, S. G; KANG, S. M; JUNG, W. S et al.Thin solid films. 2008, Vol 516, Num 11, pp 3582-3585, issn 0040-6090, 4 p.Conference Paper